GaN基紫光LED的高反射率p型欧姆接触

研究用于GaN基大功率倒装焊(Flip-chip)紫光LED(UV-LED)的高反射率p型欧姆接触的电学和光学性能。用磁控溅射的方法在GaN基LED外延片表面沉积了不同厚度Ag,Al,Au和Pd四种金属,测量了样品的反射率和透射率。结合同步辐射高强度X射线衍射和AFM对金属薄膜的晶体结构进行分析,并对表面形貌进行了观测,对由金属薄膜构成的多层膜结构及其对光反射率的作用机理进行了研究。测量结果表明,在入射光波长为400nm时,Ni/Au/Ag和Ni/Au/Al电极的反射率比Ni/Au的反射率提高了三倍。同时与p-GaN有良好的欧姆接触特性。     

有关力学谱和内耗工作的综合与回顾

本文广泛地收集了有关内耗，力学谱，超声衰减方面的专著及会议文集。反映了20世纪在此领域的英文，俄文出版的书籍。也列出了历次国际会议及前苏联，乌克兰，中国的国内会议。文中包括了点缺陷，电，声子，位错，晶界，电畴等诸方面在内的内耗与力学谱工作。     

High resolution electronic study of ONO, ONO and ONO: A rovibronic survey covering 11 800-14 380 cm

The 11 800-14 380 cm⁻¹ frequency range has been scanned for rotationally resolved rovibronic transitions in the A²B₂-X²A₁ electronic band system of the symmetric (C_2v) ¹⁶O¹⁴N¹⁶O and ¹⁸O¹⁴N¹⁸O isotopologues and in the corresponding electronic band system of the asymmetric (C_s) ¹⁸O¹⁴N¹⁶O isotopologue. The rotational analysis—reflecting minor differences in mass—in combination with symmetry induced spectral differences allows an identification of 68 ¹⁶O¹⁴N¹⁶O vibronic levels, 26 ¹⁸O¹⁴N¹⁸O vibronic levels and 51 ¹⁸O¹⁴N¹⁶O vibronic levels. The bands are recorded using near infrared fluorescence spectroscopy and a piezo valve based pulsed molecular beam expansion of premixed ¹⁸O₂ and ¹⁴N¹⁶O in Ar. The majority of the observed bands is rotationally assigned and can be identified as transitions starting from the vibrational ground state of one of the isotopologues. Numerous hot bands have also been identified. A comparison of the overall spectroscopic features of C_2v vs. C_s symmetric species provides qualitative information on symmetry dependence of vibronic couplings.     

The electronic structure of the interface between thin conjugated oligomer films and inorganic substrates with different work function

In this work, a comparison of the interfacial electronic properties between a semiconducting oligomer and a variety of substrates with different properties—metal, semiconductor and oxide layers—is reported. The interface formation was studied by X-ray and Ultraviolet photoelectron spectroscopies (XPS, UPS). High purity oligomer films with thickness up to 10 nm were prepared by stepwise evaporation on the clean substrates under ultrahigh vacuum (UHV) conditions. Analysis of the oligomer and substrate related XPS spectra clarified the interfacial chemistry and band bending in the semiconducting materials. The valence band structure and the interfacial dipoles were determined by UPS. The barriers for hole injection were measured at the interfaces of the organic film with all substrates. The interfacial energy band diagrams were deduced in all cases from the combination of XPS and UPS results. Emphasis was given on the influence of the substrate work function (eΦ) on the electronic properties of these interfaces.     

Homogeneous immunoassays

Applied Biochemistry and Biotechnology -     

掺杂对碳纳米管拉曼光谱及场发射性能的影响

采用高温热解法在860℃分别制备出了镓、氮以及硼和氮掺杂的碳纳米管,提纯后利用丝网印刷工艺分别将它们制备成薄膜,并测试了它们的拉曼光谱与场发射性能。测试结果表明,掺杂纳米管的缺陷密集度比纯碳纳米管明显增大,而它们的场致电子发射性能则与掺杂元素的性质密切相关。镓和氮掺杂的纳米管均具有非常优异的场发射性能,而硼和氮共掺杂的纳米管的场发射性能很差。掺杂引起碳纳米管费米能级附近能态密度的变化及功函数的降低是其具有优异场致电子发射性能的主要原因。     

K-Dependence and temperature dependence of N2-, H2-, and He-broadening coefficients for the J = 12-11 transition of acetonitrile CH3CN located near 220.7 GHz

Extensive experiments on the K = 3 component of the J = 12-11 rotational transition of acetonitrile CH₃C¹⁴N, located near 220.7 GHz, were performed at different temperatures in the range 235-350 K. They allow determining the N₂-, H₂-, and He-broadening coefficients, as well as their temperature dependences. More specific measurements on all the K-components of the involved transition perturbed by N₂ at 303 K allow to point out a clear decreasing of the broadening coefficient with increasing K. Narrowing effects are clearly observed, and experimental lines were analysed both with Voigt and speed dependent Voigt profiles; but no exhaustive lineshape study was carried out. All the experimental parameters are compared with results derived from a semiclassical calculation of collisional interactions, including electrostatic, induction, and dispersion energy contributions.     

薄原子蒸汽膜的双光子光谱及Dicke窄化

薄原子蒸汽膜的单光子Dcike窄化吸收光谱可以拓展到双光子情形，以级联三能级系统为例,从理论上得到了亚多普勒结构的双光子吸收光谱，其线型表现出和单光子过程相似的与膜厚和探测光波长的比值(L/λ)相关的周期性.当L/λ=(2n+1)/2(膜厚为半波长的奇数倍)时，吸收谱线窄化现象明显.当L/λ=2n/2(膜厚为半波长的偶数倍)时，单光子情形的谱线窄化现象消失，而双光子情形的谱线仍表现为亚多普勒结构，尤其在异侧入射的情形下，可以获得极窄的双光子谱线结构. 这种结构来自原子与腔壁碰撞的消激发效应和双光子过程的抽运-探测机制的贡献. 关键词： 薄原子蒸汽膜 双光子光谱 Dicke窄化     

New interpretations of XPS spectra of nickel metal and oxides

A current interpretation of XPS spectra of Ni metal assumes that the main 6 eV satellite is due to a two hole c3d⁹4s² (c is a core hole) final state effect. We report REELS observation in AES at low voltages of losses (plasmons and inter-band transitions) corresponding to the satellite structures in Ni metal 2p spectra. The satellite near 6 eV is attributed to a predominant surface plasmon loss. A current interpretation of Ni 2p spectra of oxides and other compounds is based on charge transfer assignments of the main peak at 854.6 eV and the broad satellite centred at around 861 eV to the cd⁹L and the unscreened cd⁸ final-state configurations, respectively (L is a ligand hole). Multiplet splittings have been shown to be necessary for assignment of Fe 2p and Cr 2p spectral profiles and chemical states. The assignments of Ni 2p states are re-examined with intra-atomic multiplet envelopes applied to Ni(OH)₂, NiOOH and NiO spectra. It is shown that the free ion multiplet envelopes for Ni²⁺ and Ni³⁺ simulate the main line and satellite structures for Ni(OH)₂ and NiOOH. Fitting the NiO Ni 2p spectral profile is not as straightforward as the hydroxide and oxyhydroxide. It may involve contributions from inter-atomic, non-local electronic coupling and screening effects with multiplet structures significantly different from the free ions as found for MnO. A scheme for fitting these spectra using multiplet envelopes is proposed.     

Extension of the range of resonator scanning spectrometer into submillimeter band and some perspectives of its further developments

Extension of the working frequency of modern resonator spectrometers into submillimeter wave range is described. Experimental record of atmospheric absorption spectrum covering 45-370 GHz range is demonstrated for the first time, and measured water vapor J′_{ka′, kc′}-J_{ka, kc} = 5_1,5-4_2,2 at 325 GHz line parameters are presented. For the first time pressure lineshift for the 325-GHz water vapor line is measured. Further extension of working range is discussed. New estimations of physical limits of time needed for measurements of absorption in the whole Backward Wave Oscillator (BWO) range are given for phase continuous synthesizer regime. Basic schemes of fast broadband continuous phase synthesized sources are discussed. Verification of the previous measurements of water vapor 3_1,3-2_2,0 at 183 GHz line parameters is presented. Comparisons with ringdown resonator spectrometers are given.